Design of c+-implantation conditions by TRIM calculation for ion beam defect engineering in Ge/sup +/preamorphized and BF/sub 2/+-implanted silicon

摘要

TRIM cascade calculations were utilized to simulate the defect production and energy deposition in the ion implanted silicon. A guide line for carbon ion beam defect engineering implant is obtained to reduce the size of residual defects in the high energy Ge+ preamorphized and low energy BF/sub 2/+ implanted silicon.