InGaAsP/InGaAs multi-quantum-well distributed-Bragg-reflector lasers grown by chemical beam epitaxy

摘要

rt the fabrication and performance of InGaAs/InGaAsP multi-quantum well distributed-Bragg-reflector lasers grown by chemical beam epitaxy. By using a long and weak grating, which was made on a thin and uniformly grown quaternary layer, we have been able to well control the grating coupling constant, $kappa@. For most of the lasers the measured linewidths are below 10 MHz. A record high side mode suppression ratio of 58.5 dB was obtained.