20 GHz high-efficiency power amplifiers using monolithic multi-cell permeable base transistors

摘要

The performance at 20 GHz of high-efficiency power amplifiers using a novel class of GaAs permeable base transistors (PBTs) is described. These devices utilize chip-level power-combining of multicell 8-by-20- mu m PBT active areas and have demonstrated an output power of 437 mW with a power-added efficiency of 35% in a connectorized microstrip amplifier. The power, efficiency, and gain performance of demonstration amplifiers using these devices is described.