20-GHz High-Efficiency Power Amplifiers Using Monolithic Multi-Cell PermeableBase Transistors

摘要

The performance at 20 GHz of high-efficiency power amplifiers using a new classof GaAs permeable base transistors (PBTs) is described. These devices utilize chip-level power-combining of multi-cell 8-by-20-um PBT active areas and have demonstrated an output power of 437 mW with a power-added efficiency of 35% in a connectorized microstrip amplifier. The power, efficiency, and gain performance of demonstration amplifiers using these new devices is described. PBT, High-efficiency, Multi-cell, Power-added.