Stacked Nanowires 驴FET with Independent Gates: A Novel Device for Ultra-dense Low-Power Applications

摘要

Based on 3D numerical simulations and on a technological evaluation, we demonstrate the relevance of a new stacked nanowires architecture concept with independent gates, the 驴FET. We study the coupling effects in nanowires controlled by two independent gates. This architecture, proposed for low-power applications, reveals an excellent control of short-channel effects and improved ION/IOFF ratios compared to FinFET with the same designed width.