Far-infrared response of Schottky diodes: high-frequency limit

摘要

The rolloff of the Schottky-diode responsivity in the far infrared have been theoretically and experimentally studied. The measured data are compared with the theory taking into account the retardation of the carrier distribution function with respect to high-frequency electric field in the depletion layer of the semiconductor. The new highest possible cutoff frequency, following from this theory, differs considerably from generally accepted one.