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Influence of steps temperature on microstructure and hardness of TiO2 thin films deposited by co-sputtering

机译:步骤温度对通过溅射沉积的TiO2薄膜微观结构和硬度的影响

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TiO2 thin films were synthetized by magnetron co-sputtering on silicon (100) substrates.Two targets were used:Ti and TiO inside an inert atmosphere of Argon gas at room temperature.Post-deposition thermal annealing treatments were performed with different numbers of step temperature segments to reach 500 °C for 3 hours.The effect of the variation of the number of step temperature segments in the micro hardness and microstructure of the films was studied,using XRD,Raman spectroscopy,SEM,AFM,photoluminescence (PL) and Vickers hardness.Vickers hardness evinced values between 14.7 and 19.8 GPa.Raman spectroscopy showed that the film without thermal annealing does not present any active bands,while films with post deposit annealing treatments had rutile and anatase phases with higher intensity as the number of step temperature segments increased,this behavior was corroborated by XRD.SEM and AFM showed a change in the morphology as the number of step temperature segments increased.Moreover,PL showed that oxygen defects decrease as the annealing time increases;which could be related to the change in hardness and morphology.
机译:通过在硅(100)衬里上的磁控杂交合成TiO2薄膜。使用靶标:Ti和TiO在室温下氩气的惰性气氛内。用不同数量的步骤温度进行沉积热退火处理段达到500°C 3小时。使用XRD,拉曼光谱,SEM,AFM,光致发光(PL)和维氏型,研究了步进温度和微观结构中的阶梯温度段数的变化的效果。硬度。在14.7和19.8GPa的情况下,硬度是值为14.7和19.8 GPA.RAMAN光谱的值表明,没有热退火的薄膜没有出现任何有源条带,而具有后沉积退火处理的薄膜具有较高强度的金红石和锐钛矿相,则阶梯温度段的数量较高。增加,这种行为是通过XRD.SEM和AFM表现出形态的变化,随着阶梯温度段的数量增加。 L表明,随着退火时间的增加,氧缺陷降低;这可能与硬度和形态的变化有关。

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