RUTHENIUM COMPOUND WITH EXCELLENT STEP COVERAGE CAPABLE OF BEING DEPOSIT ON AN ATOMIC LAYER AT HIGH TEMPERATURE AND A THIN FILM DEPOSIT BY USING THE SAME

摘要

PURPOSE: A ruthenium compound is provided to have excellent thermal stability, gasification performance, and step coverage by including a specific ligand of 1-ethyl-1,4-cyclohexadiene, 1,3-butadiene, or isoprene.;CONSTITUTION: A ruthenium compound is represented by chemical formula 1, has T1/2 at 205-230= in TGA spectrum, and shows constant weight loss at 80-120=. In 150= isothermal TGA spectrum, the minimum residue rate reaches 0.1% or less within 90 minutes. A depositing method of a thin film comprises a step of forming ruthenium metal thin film or ruthenium metal oxide thin film by an atomic layer deposition process by using the ruthenium compound represented by chemical formula 1. The step coverage of the ruthenium thin film is 70% or more. The deposition temperature of the ruthenium compound is 200-350=.;COPYRIGHT KIPO 2013