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Thermal Modeling Approach for Enhancing TCNCP Process for Manufacturing Fine Pitch Flip Chip Packages

机译:用于增强制造微距倒装芯片封装的TCNCP工艺的热建模方法

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The next generation of communication devices like smart-phones and tablets require smaller integrated circuits with a large number of signal I/O's to support higher performances. Flip chip interconnect technology has traditionally been driven by electrical performance and package miniaturization. As the IC's become smaller and higher performing with advancements in silicon nodes (45nm, 28nm and beyond), the need for fine pitch flip chip technology is of paramount importance. Copper pillar fine pitch flip chip (CuP-FPFC) packaging technology enables devices with a bump pitch less than 60um to meet electrical, thermal and dimensional requirements of the application. Previous studies have shown that thermo-compression bonding in presence of a nonconductive paste (TCNCP) is a robust process for manufacturing CuP-FPFC packages. To achieve reliable solder joints with highest assembly yields it is of paramount importance to optimize heating profile of the TCNCP process. In this paper, a transient conduction model is presented to predict and optimize rapid heat flow patterns through various stages of the TCNCP process.
机译:智能手机和平板电脑等下一代通信设备需要具有大量信号I / O的集成电路,以支持更高的性能。倒装芯片互连技术传统上由电气性能和包装小型化驱动。随着IC的硅节点(45nm,28nm及更大)的进步更越来越越来越较高,因此对细距倒装芯片技术的需求至关重要。铜柱细距倒装芯片(CUP-FPFC)封装技术使凸块间距的装置能够小于60um,以满足应用的电气,热和尺寸要求。以前的研究表明,存在非导电浆料(TCNCP)的热压缩键合是制造CUP-FPFC封装的鲁棒方法。为了实现最高装配的可靠焊点,优化TCNCP工艺的加热曲线至关重要。在本文中,提出了一种瞬态传导模型来通过TCNCP工艺的各个阶段预测和优化快速热流模式。

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