首页> 外文会议>International Conference on Ion Sources >Improvement of microwave injection for heavy-ion production at a compact ECR ion source
【24h】

Improvement of microwave injection for heavy-ion production at a compact ECR ion source

机译:紧凑型ECR离子源的重离子生产微波喷射的改进

获取原文

摘要

A prototype compact electron cyclotron resonance ion source with all permanent magnets named Kei3 and based on Kei2, has been developed to produce various ions. Kei3 has an outer diameter of 280 mm and a length of 1120 mm. The magnetic field is formed by the same permanent magnet as Kei2. We investigated the basic performance of the Kei3 source at a previous experiment. The maximum beam current of C~(4+), N~(5+), O~(6+) and Ne~(7+) were 565 μA, 185 μA, 99 μA and 50.5 μA, respectively. In order to increase the beam current of heavy ions, such as argon, we modified the microwave injection. The rf shield in the plasma chamber was used as a tuner of microwaves. The rf shield was installed at the position of a mirror peak of the injection side, and it can be moved 30 mm to an upstream side from there. As a result, we found optimal position of the rf shield for the production of Ar ions.
机译:已经开发出具有名为KEI3的所有永磁体并基于KEI2的原型紧凑型电子回火离子离子源,以产生各种离子。 Kei3的外径为280 mm,长度为1120 mm。磁场由与KEI2相同的永磁体形成。我们调查了之前的实验中的KEI3来源的基本性能。 C〜(4+),N〜(5+),O〜(6+)和NE〜(7+)的最大光束电流分别为565μA,185μA,99μA和50.5μA。为了增加重型离子的光束电流,例如氩气,我们修改了微波注射。等离子体室中的RF屏蔽用作微波的调谐器。 RF屏蔽安装在注射侧的镜子峰的位置,并且可以从那里移动30mm到上游侧。结果,我们发现RF屏蔽的最佳位置用于生产AR离子。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号