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Reliability of Gallium Nitride microwave transistors: A framework for the evaluation of failure mechanisms and instabilities, from accelerated testing to failure analysis and process improvement

机译:氮化镓微波晶体管的可靠性:从加速测试和工艺改进评估失败机制和稳定性的框架

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摘要

This paper describes a laboratory and methodology for the complete assessment of the reliability of microwave and power Gallium Nitride (GaN) devices. Examples related to deep level effects in GaN High Electron Mobility Transistors (HEMTs), to HEMT gate degradation and time dependent breakdown effects are described.
机译:本文介绍了一种实验室和方法,用于完全评估微波和氮化镓(GaN)器件的可靠性。描述了与GaN高电子迁移率晶体管(HEMT)中的深度效应相关的示例,描述为HEMT栅极劣化和时间依赖性分解效果。

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