Improving gain bandwidth product using negative resistance and DTMOS technique

摘要

In this paper we report a low voltage differential amplifier based on self-cascode topology which is suitable for low voltage and high speed operation. A negative conductance is used that will cancel the positive output conductance of an amplifier. As a result the total equivalent output conductance is reduced and thereby the overall voltage gain of the amplifier is increased. Using this technique we have achieved an increment in gain by a factor of 1.45 times. In bulk CMOS technology the body of the transistor can be used as a fourth terminal to enhance the performance of low-voltage analog circuits. Modeling the body effect will increase the overall transconductance of the MOS transistor. The use of Dynamic Threshold technique will enhance the gain-bandwidth product of the amplifier. The gain bandwidth product has increased by 52.63%. Also the DTMOS technique is compatible with the standard bulk CMOS technique and hence there is no requirement for the additional area. Simulations are carried out using 180nm CMOS technology at 1V to validate the proposed idea.