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Broadband Circuit Techniques for Multi-Terahertz Gain-Bandwidth-Product Low-Power Applications

机译:多兆赫兹增益带宽产品低功耗应用的宽带电路技术

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摘要

In this paper, two proposed bandwidth (BW) extension techniques are discussed and analytically analyzed. The capabilities of the proposed feedback techniques are demonstrated with two design examples of different circuitry, supported by simulation and measurement results. The first design example is a broadband low-power active balun, employing one of the presented feedback techniques. It is capable of operating with a gain of 2.2 dB and BW of more than 70 GHz. The amplitude imbalance is less than 2.4 dB, while the phase imbalance is below 7 up to 60 GHz and 14 up to 70 GHz, consuming a low-power of 29.7 mW. The second design example is a differential three-stage amplifier, incorporating the two techniques, where their combined performance achieves a gain of 54 dB and a 3-dB BW of 25 GHz, resulting in a gain-BW product (GBP) of 12.5 THz, with a power consumption of 180 mW from a 3.3-V supply. The chips are fabricated in a 0.35-m SiGe:C bipolar technology with a of 200/250 GHz.
机译:在本文中,讨论并分析了两种提议的带宽(BW)扩展技术。所提出的反馈技术的功能通过不同电路的两个设计实例进行了演示,并得到了仿真和测量结果的支持。第一个设计示例是采用所提出反馈技术之一的宽带低功率有源巴伦。它能够以2.2 dB的增益和70 GHz以上的带宽工作。幅度不平衡小于2.4 dB,而相位不平衡在最高60 GHz时低于7,在最高70 GHz时低于14,消耗29.7 mW的低功率。第二个设计示例是差分三级放大器,结合了两种技术,它们的组合性能实现了54 dB的增益和25 GHz的3 dB BW,从而产生了12.5 THz的增益BW积(GBP) ,其3.3V电源的功耗为180mW。这些芯片采用0.35-m SiGe:C双极技术制造,频率为200/250 GHz。

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