Advanced CD-SEM metrology for qualification of DSA patterns using coordinated line epitaxy (COOL) process

摘要

Directed self-assembly (DSA) applying chemical epitaxy is one of the promising lithographic solutions for next generation semiconductor device manufacturing. Especially, DSA lithography using coordinated line epitaxy (COOL) process is obviously one of candidates which could be the first generation of DSA applying PS-b-PMMA block copolymer (BCP) for sub-15nm dense line patterning. DSA can enhance the pitch resolutions, and can mitigate CD errors to the values much smaller than those of the originally exposed guiding patterns. On the other hand, local line placement error often results in a worse value, with distinctive trends depending on the process conditions. To address this issue, we introduce an enhanced measurement technology of DSA line patterns with distinguishing their locations in order to evaluate nature of edge placement and roughness corresponding to individual pattern locations by using images of CD-SEM. Additionally correlations among edge roughness of each line and each space are evaluated and discussed. This method can visualize features of complicated roughness easily to control COOL process. As a result, we found the followings. (1) Line placement error and line placement roughness of DSA were slightly different each other depending on their relative position to the chemical guide patterns. (2) In middle frequency area of PSD (Power Spectral Density) analysis graphs, it was observed that shapes were sensitively changed by process conditions of chemical stripe guide size and anneals temperature. (3) Correlation coefficient analysis using PSD was able to clarify characteristics of latent defect corresponding to physical and chemical property of BCP materials.