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Performance of Radiation Hardening Techniques under Voltage and Temperature Variations

机译:电压和温度变化下辐射硬化技术的性能

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The effectiveness of the techniques to mitigate radiation particle hits in digital CMOS circuits has been mainly studied under a given set of environmental conditions. This paper will explicitly analyze, how the performance of two selected radiation hardening techniques, namely transistor sizing and stack separation, varies with temperature and supply voltage. Our target is an inverter circuit in UMC90 bulk CMOS technology, instances of which have been hardened against charges of 300fC and 450fC using either of the two techniques under investigation. In a Spice simulation we apply particle hits to these circuits through double-exponential current pulses of the respective charge. We study the effect of these pulses in a temperature range from -55 C to +175 C and a supply voltage of 0.65 to 1.2V (nominal IV) at the output of a (unhardened) buffer that has been connected as a load. For the hardening by sizing we observe proper operation in the range from 1.2V to 900mV, while for lower supply we observe full swing pulses of increasing magnitude when the respective maximum charge is applied. The influence of temperature turns out to be minor. For the stack separation approach the observation is similar, however, the circuit starts glitching only at 750mV. Our study allows the following conclusions: (i) The effectiveness of the hardening approaches strongly depends on the supply voltage, and moderately on temperature. (ii) As expected, low voltage and high temperature represent the worst case for rad-hard sizing. Stack separation, on the other hand, unexpectedly shows a stronger and more complicated temperature dependence. (ii) For voltages below approx. 90% of nominal the hardening by sizing fails, when designed for nominal voltage and room temperature. The approach can be enhanced to survive this worst case by increasing the sizing factor further by more than 3 times. (iv) The stack separation only fails for voltages below approx. 75% of nominal, but there is no simple remedy to make it reliable for a larger range. This must be considered when judging the appropriateness of this method for a given purpose. Also it turned out that once it fails, the resulting SET pulse has considerable length.
机译:在给定的一组环境条件下主要研究了减轻辐射颗粒的技术来减轻辐射粒子的效果。本文将明确分析,如何进行两种选定的辐射硬化技术,即晶体管尺寸和堆叠分离的性能,随温度和电源电压而变化。我们的目标是UMC90批量CMOS技术的逆变电路,其实例,其实例通过调查中的两种技术中的任一种来抵抗300FC和450FC的电荷。在香料仿真中,我们通过各个电荷的双指数电流脉冲将粒子命中到这些电路。我们研究这些脉冲在-55℃至+175℃的温度范围内的效果,以及0.65至1.2V(标称IV)的电源电压在已连接为负载的(未加工的)缓冲液的输出时。对于通过尺寸的硬化,我们观察到从1.2V到900mV的适当操作,而对于较低的供应,我们观察施加相应的最大电荷时,我们观察到增加的幅度的全面摆幅。温度的影响结果是轻微的。对于堆叠分离方法,观察相似,但是,电路仅在750mV下开始故障。我们的研究允许以下结论:(i)硬化方法的有效性强烈取决于电源电压,适度地对温度。 (ii)如预期的那样,低电压和高温代表了rad-硬度尺寸的最坏情况。另一方面,堆叠分离意外地显示出更强更复杂的温度依赖性。 (ii)在大约下的电压。当专为标称电压和室温设计时,通过尺寸为90%的标称硬化失效。通过将尺寸因子进一步提高超过3次,可以提高这种方法以存活这种最坏的情况。 (iv)堆叠分离仅在低于约的电压下降。 75%的标称,但没有简单的补救措施使其可靠的范围。在判断这种方法的适当的情况下,必须考虑这一点。结果证明,一旦失败,所得到的设定脉冲具有相当长的长度。

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