Persistent Photoconductivity in AlGaN/GaN Heterojunction Channels Caused by the Ionization of Deep Levels in the AlGaN Barrier Layer

摘要

Time-dependent responses of drain current (Id) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances Id by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10~(12) cm~(-2). When UV light is turned off at 300 K, a part of increased I_d decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of Id at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light.