Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer

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• 来源
  《中国物理：英文版》 |2014年第3期|489-492|共4页
• 作者

  Wen Hui-Juan; Zhang Jin-Cheng; Lu Xiao-Li; Wang Zhi-Zhe; Ha Wei; Ge Sha-Sha; Cao Rong-Tao;

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• 作者单位

  State Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;

  State Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;

  State Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;

  State Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;

  State Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;

  State Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;

  State Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;

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• 正文语种 eng
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