1/f-noise in Vertical InAs Nanowire Transistors

摘要

The material quality at high-k interfaces are a major concern for FET devices. We study the effect on two types of InAs nanowire (NW) transistors and compare their characteristics. It is found that by introducing an inner layer of Al_2O_3 at the high-κ interface, the low frequency noise (LFN) performance regarding gate voltage noise spectral density, S_(Vg), is improved by one order of magnitude per unit gate area.