250-290 GHz Amplifier in 75-nm InP HEMT Technology Using Inverted Microstrip Transmission Line

摘要

In this paper, we present the development of J-band amplifier in 75-nm InP HEMT technology. The circuit utilizes a six-stage common-source amplifier. An inverted microstrip line (IMSL) structure is employed for matching networks of the amplifier. The developed amplifier realizes a small signal gain of 173 dB and a 3-dB band width of 35 GHz from 254 GHz to 289 GHz.