Terahertz GaAs Schottky diode mixer and multiplier MIC's based on e-beam technology

摘要

We present the progress of the technological development of a full e-beam based monolithically integrated Schottky diode process applicable for sub-millimetre wave multipliers and mixers. Evaluation of the process has been done in a number of demonstrators showing state-of-the-art performance, including various multiplier circuits up to 200 GHz with a measured flange efficiency of above 35%, as well as heterodyne receiver front-end modules operating at 340 GHz and 557 GHz with a measured receiver DSB noise temperature of below 700 K and 1300 K respectively.