Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

摘要

In this work we report on the two most common failure modes for AlGaN/GaN-based HEMTs: the gate leakage increase and the output current drop. First, by performing step-stress experiments in function of the step-time (tSTEP) we show that the critical voltage for the increase of gate leakage current depends on the tSTEP and is not associated with a permanent drop of the output current. Consequently, identification of the critical voltage by means of step-stress is not meaningful per se since it depends on the tSTEP used. Second, we show that during high power stress at high voltage a permanent output current drop occurs. The failure analysis reveals the formation of crystallographic defects in the AlGaN layer along the whole width of the gate, in agreement with the inverse piezoelectric theory. However, in contrast to the degradation model based on the inverse piezoelectric effect, these defects do not aid the leakage of electrons from the gate toward the drain electrode since the output current drop is not associated with an increase of the gate leakage current. Therefore, combining the outcome of the two experiments, we suggest that the two most common failure modes are not correlated despite both might concur to the device degradation. Finally, an excellent stability is shown for devices with reduced Al content in the AlGaN barrier, highlighting the fundamental role of strain on reliability of AlGaN/GaN-based devices.