Bulk Synthesis and Structural Determination of High Mobility Multication Transparent Conducting Oxides

摘要

This work reports the synthesis of novel quaternary transparent conducting oxide Cd_(1-x)Sn_(1-x)In_xGa_xO_3 (x = 0.1, 0.2, 0.3) at 1225°C via solid state reaction route. The investigations on structural, optical and electrical properties have been carried out. Powder X-ray diffraction revealed the phase purity and distorted orthorhombic structure of the species synthesized. Distortion of the structure is due to the substitution of In~(3+) and Ga~(3+) in CdSnO_3 (JCPDS card no. 340885) matrix. The optical transmittance approximated by the reflectance shows considerable increase in the transmittance of visible light along with the increase of substitution. Typical Burstein-Moss effect is observed with the increase in x value as a variation in optical bandgap from 2.7 to 2.9 eV. Four point Hall measurements by Van der-Pauw method exhibit superior properties in charge carrier concentration and mobility. Maximum bulk charge concentration of 4.78×10~(17) cm~(-3) is obtained for x = 0.3. Hall mobility depends on carrier concentration and steeply increases with the carrier concentration. Considerable drop in the resistivity of the material along with higher transmittance is a critical finding in the experiment.