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Recent Advancements in Large Area Plasma Enhanced Chemical Vapor Deposition (PECVD) Coatings

机译:大面积等离子体增强化学气相沉积(PECVD)涂层的最新进展

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Sputtered silver films are over-coated with SiO_2 and SiN layers deposited by GPI's large area PECVD process. The sputtering cathode and PECVD reactor are run at the same time in a roll to roll coater demonstrating an in-line process. The optical and electrical properties of combined sputtered and PECVD layers are measured. The results show that direct top coating of SiO_2 or SiN by PECVD process is not detrimental to silver. This is unexpected given the sensitivity of silver to oxygen plasma. It is postulated the silver is protected by a precursor vapor monolayer that is physisorbed on the surface of the silver before the PECVD process. This vapor monolayer effectively functions as a blocker layer preventing damage to the silver. By demonstrating that the silver layer properties are maintained with a PECVD top coat, we show that PECVD process can successfully be integrated with sputtered silver films on large area substrates.
机译:溅射的银膜用SiO_2和由GPI大面积的PECVD工艺沉积的SiO_2和SIN层过度涂覆。溅射阴极和PECVD反应器在卷中同时运行,以滚动涂布机证明在线过程。测量组合溅射和​​PECVD层的光学和电性能。结果表明,PECVD过程的SiO_2或SiN的直接涂层对银不利。鉴于银对氧等离子体的敏感性,这是意外的。假设银由前体蒸汽单层保护,前体蒸汽单层在PECVD工艺之前在银表面上被理由。该蒸汽单层有效地用作阻塞层,防止损坏银。通过证明使用PECVD顶部涂层保持银层性质,我们表明PECVD方法可以成功地与大面积基板上的溅射银膜整合。

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