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Development of an abrasive-free polishing method for optical material using pure water and Ni catalyst

机译:使用纯水和Ni催化剂的光学材料的无磨料抛光方法的研制

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Recently, short-wavelength lights of extreme ultraviolets (EUVs) and X-rays have attracted attention because of their excellent properties to achieve microscopy and/or lithography with an extremely high spatial resolution and a higher photon energy phenomenon [1,2]. In the short-wavelength range, reflective optics are generally utilized since they have a significantly large absorption loss. However, from the viewpoint of fabrication, the surfaces of optical components for EUVs and/or X-rays become difficult to manage because they require unprecedentedly high precision and smoothness. The level of smoothness demanded at the atomic level is a root-mean-square (rms) roughness at several tens of pico-meters and needs to be realized on free-form surfaces. The chemical mechanical polishing (CMP) method is currently utilized as a final surfacing method [3,4]. In CMP, a slurry is used that includes chemicals and abrasives. The workpiece surface is chemically modified and removed with abrasives [5,6]. Due to the usage of abrasives, physical damages onto the surface are unavoidable. The damaged layer significantly reduces the optical reflectance--especially in the short wavelength range [7]. In addition, the abrasives remaining on the surface after the CMP processing are difficult to remove and can cause yield reductions to the products.
机译:最近,由于其优异的性能而具有极高的空间分辨率和更高的光子能量现象的优异性能,并且具有极高的空间分辨率和更高的光子能量现象,因此引起了极端紫外(EUV)和X射线的短波长度引起了注意力,并且具有极高的空间分辨率和更高的光子能量现象[1,2]。在短波长范围内,通常使用反射光学器件,因为它们具有显着大的吸收损失。然而,从制造的观点来看,EUVS和/或X射线的光学组件的表面变得难以管理,因为它们需要前所未有的高精度和平滑度。原子水平所需的平滑度水平是在几十微米米处的根均方(RMS)粗糙度,并且需要在自由形表面上实现。该化学机械抛光(CMP)方法目前用作最终的表面处理方法[3,4]。在CMP中,使用包括化学品和磨料的浆液。工件表面化学改性并用研磨剂除去[5,6]。由于磨料的使用,表面上的物理损坏是不可避免的。损坏的层显着降低了光学反射率 - 特别是在短波长范围内[7]。此外,在CMP处理难以去除后剩余的研磨剂难以去除,并且可能导致产品的产量降低。

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