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Effect of Sm doping on the Physical Properties of ZnO Thin Films Deposited by Spray Pyrolysis Technique

机译:SM掺杂对喷雾热解技术沉积的ZnO薄膜物理性质的影响

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Undoped and Sm doped ZnO thin films have been prepared by chemical spray pyrolysis method on a glass substrate at 430°C. The physical properties of undoped and Sm doped ZnO thin films are characterized by XRD, FESEM, UV-VIS spectroscopy, Hall measurement and PL analysis. XRD pattern reveals that all the films are polycrystalline nature. The FE-SEM study of CdO shows the smooth and uniform surface with the spherical shaped particle. The electrical study reveals the n-type semiconductor and the optical study shows that Sm doped ZnO thin films about 92% transparency and optical band gap vary between 3.266-3.276 eV. Sm doped ZnO thin films have strong green emission behavior.
机译:未掺杂和SM掺杂的ZnO薄膜通过化学喷雾热解方法在430℃下通过化学喷雾热解方法制备。未掺杂和SM掺杂ZnO薄膜的物理性质的特征在于XRD,FESEM,UV-Vis光谱,霍尔测量和PL分析。 XRD模式显示所有电影都是多晶性质。 CDO的FE-SEM研究显示了具有球形颗粒的光滑均匀的表面。电气研究揭示了N型半导体,光学研究表明,SM掺杂的ZnO薄膜约为92%的透明度和光学带隙在3.266-3.276eV之间变化。 SM掺杂的ZnO薄膜具有强大的绿色排放行为。

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