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Extraordinary carrier multiplication in GaAs MQWs induced by intense terahertz pulse

机译：通过激烈的太赫兹脉冲引起的GaAs MQW的非凡载波倍增

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We report on the extraordinary carrier multiplication phenomena of GaAs quantum wells under only intense terahertz (THz) pulse irradiation. The intensity of exciton luminescence is enhanced more than about 103 times with an increase of the electric field amplitude of the THz pulse from 0.5 to 1 MV/cm with a threshold-like behavior.

机译：我们在仅激烈的太赫兹（THz）脉冲照射下GaAs量子阱的非凡载波倍增现象报告。激子发光的强度增强超过约10 3 时间，随着THz脉冲的电场幅度的增加，从0.5到1 mV / cm的阈值类似的行为。

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《International Conference on Infrared,Millimeter and Terahertz Waves 》|2011年||共2页
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Hirori H.; Shinokita K.; Shirai M.; Tani S.; Kadoya Y.; Tanaka K.;
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1. Ultrafast carrier generation in Bi _{1- x}Sb _x thin films induced by intense monocycle terahertz pulses [J] . Ikufumi Katayama, Hiroki Kawakami, Kotaro Araki, EPJ Web of Conferences . 2019 ,第2期

机译：强烈的单周期太赫兹脉冲在Bi _{1- x Sb _{x 薄膜中超快载流子的产生}}
2. Enhancement of hot-carrier photoluminescence with intense terahertz pulses [J] . Purschke D. N., Na M., Longman A., Applied Physics Letters . 2018 ,第7期

机译：太赫兹脉冲增强热载流子的光致发光
3. Intense, carrier frequency and bandwidth tunable quasi single-cycle pulses from an organic emitter covering the Terahertz frequency gap [J] . C. Vicario, B. Monoszlai, M. Jazbinsek, Scientific reports. . 2015 ,第1期

机译：来自有机发射器的强，载频和带宽可调准单周期脉冲，覆盖了太赫兹频率间隙
4. Extraordinary carrier multiplication in GaAs MQWs induced by intense terahertz pulse [C] . Hirori H., Shinokita K., Shirai M., 36th International Conference on Infrared, Millimeter, and Terahertz Waves . 2011

机译：强太赫兹脉冲在GaAs量子阱中产生非凡载流子倍增
5. Terahertz spectroscopy and laser induced infrared emission spectroscopy of nitromethane and optical properties of laser-induced carriers on semiconductor surfaces probed by a 10.6 micron wavelength carbon dioxide laser. [D] . Toyoda, Yoshimasa. 2008

机译：硝基甲烷的太赫兹光谱和激光诱导红外发射光谱，以及用10.6微米波长的二氧化碳激光器探测的半导体表面上激光诱导的载流子的光学特性。
6. Intense carrier frequency and bandwidth tunable quasi single-cycle pulses from an organic emitter covering the Terahertz frequency gap [O] . C. Vicario, B. Monoszlai, M. Jazbinsek, -1

机译：来自有机发射器的强载频和带宽可调准单周期脉冲覆盖了太赫兹频率间隙
7. Ultrafast carrier generation in Bi1-xSbx thin films induced by intense monocycle terahertz pulses [O] . Ikufumi Katayama, Hiroki Kawakami, Kotaro Araki, 2019

机译：由强烈单组科太赫兹脉冲引起的BI1-XSBX薄膜中的超快载体生成
8. Effects of Strain-Induced Defects on Excess Carrier Lifetime and AmbipolarDiffusion in nipi-Doped In sub 0.2 Ga sub 0.8 As/GaAs MQWs [R] . Lin, H. T., Rich, D. H., Larsson, A. 1995

机译：应变诱导缺陷对尼泊掺杂亚0.2 Ga亚0.8 as / Gaas mQW中过剩载流子寿命和双极扩散的影响

Extraordinary carrier multiplication in GaAs MQWs induced by intense terahertz pulse

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