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Effects of Strain-Induced Defects on Excess Carrier Lifetime and AmbipolarDiffusion in nipi-Doped In sub 0.2 Ga sub 0.8 As/GaAs MQWs

机译：应变诱导缺陷对尼泊掺杂亚0.2 Ga亚0.8 as / Gaas mQW中过剩载流子寿命和双极扩散的影响

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作者
Lin, H. T.; Rich, D. H.; Larsson, A.;
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年度 1995
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总页数 7
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Quantum wells; Reprints; Gallium arsenides; Heterojunctions; Charge carriers; Strains; Transport properties; Crystal defects; Indium compounds;

机译：量子阱;重印;砷化镓;异质结;电荷载流子;应变;传输特性;晶体缺陷;铟化合物;

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专利

1. A low-voltage, high-reflectance-change normally off refractive GaAs/Al/sub 0.2/Ga/sub 0.8/As MQW reflection modulator [J] . Chih-Hsiang Lin, Meese J.M. IEEE Journal of Quantum Electronics . 1994,第5期

机译：一种低电压，高反射率变化的常态折光GaAs / Al / sub 0.2 / Ga / sub 0.8 / As MQW反射调制器
2. Piezoelectric field effect transistor (PEFET) using In/sub 0.2/Ga/sub 0.8/As/Al/sub 0.35/Ga/sub 0.65/As/In/sub 0.2/Ga/sub 0.8/A s/GaAs strained layer structure on [J] . Lu S.S., Huang C.L. Electronics Letters . 1994,第10期

机译：在其上使用In / sub 0.2 / Ga / sub 0.8 / As / Al / sub 0.35 / Ga / sub 0.65 / As / In / sub 0.2 / Ga / sub 0.8 / A s / GaAs应变层结构的压电场效应晶体管（PEFET）
3. Bendable MOS capacitors formed with printed In_(0.2)Ga_(0.8)As/GaAs/In_(0.2)Ga_(0.8)As trilayer nanomembrane on plastic substrates [J] . Chen Liu, Sang June Cho, Yei Hwan Jung, Applied Physics Letters . 2017,第13期

机译：在塑料基板上印刷有In_（0.2）Ga_（0.8）As / GaAs / In_（0.2）Ga_（0.8）As三层纳米膜的可弯曲MOS电容器
4. Subnanosecond optical deflection in Van der Waals bonded GaAlAs-GaAs MQW: effects of carrier lifetime and electric field [C] . Le Gratiet, L., Bedel, . 1996

机译：范德华键合GaAlAs-GaAs MQW中的亚纳秒光学偏转：载流子寿命和电场的影响
5. Thermodynamic Investigation of La0.8Sr0.2MnO 3±δ Cathode Including the Prediction of Defect Chemistry, Electrical Conductivity and Thermo-Mechanical Properties [D] . Darvish, Shadi 2018

机译：La0.8Sr0.2MnO 3±δ阴极的热力学研究，包括缺陷化学，电导率和热机械性能的预测
6. Interface Adhesion and Structural Characterization of Rolled-up GaAs/In0.2Ga0.8As Multilayer Tubes by Coherent Phonon Spectroscopy [O] . D. Brick, V. Engemaier, Y. Guo, -1

机译：相干声子能谱分析卷起的GaAs / In0.2Ga0.8As多层管的界面黏附和结构表征
7. Comparison between the electrical conductivities of La0.8Sr0.2Ga0.8Mg0.2O3 and La0.8Sr0.2Ga0.8Mg0.15Co0.05O3 [O] . Wu Lingli, 吴玲丽, Wang Shizhong, 2006

机译：La0.8Sr0.2Ga0.8Mg0.2O3和La0.8Sr0.2Ga0.8Mg0.15Co0.05O3的电导率比较

Effects of Strain-Induced Defects on Excess Carrier Lifetime and AmbipolarDiffusion in nipi-Doped In sub 0.2 Ga sub 0.8 As/GaAs MQWs

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