We report on the performance of silicon CMOS-transistor-based plasmonic THz detectors up to 4.25 THz. Room-temperature responsivity values of 1011 V/W at 584 GHz, 90 V/W at 3.125 THz and 11 V/W at 4.25 THz are reported. When cooled down to 20 K a maximum responsivity of 3.47 kV/W and a noise-equivalent power of 3 pW/√Hz are reached.
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机译：我们报告了基于硅CMOS - 晶体管的等离子体THz探测器的性能，高达4.25至THz。报告了房间 - 温度响应值，1011V / W，9.125至3.25星，4.25THz的90 V / W.11 V / W。当冷却至20 k时，达到3.47kV / W的最大响应度和3 PW /√Hz的噪声等效功率。
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