Research of SOI Microelectromechanical Sensors with a Monolithic Tensoframe for High-Temperature Pressure Transducers

摘要

This paper is devoted to an integrated piezoresistive pressure sensors based on novel concept of high-temperature microelectromechanical SOI sensors with a monolithic tensoframe. The SOI and integrated MEMS technologies are of especial interest for this sensors. The research enables main technology problems due to the features of a photolithography process on a relief surface with the high aspect ratio and resulted restrictions on the design parameters of SOI sensor three-dimensional micromechanical structures to be defined.