Cleaning of copper surfaces is required to remove undesired surface oxidation during the interconnect fabrication process. In this work, we examined the vapor-phase cleaning of Cu surfaces using anhydrous N2H4. Gas cluster ion beam (GCIB) depth profiling and elemental analysis using XPS shows that Cu_xO in the Cu sample, formed after exposure to air, can be effectively reduced to Cu~0 at 200°C. By monitoring the surface chemistry using in-situ reflectance absorption infrared spectroscopy (RAIRS), we found that atomic layer deposition (ALD)-like single exposure of N_2H_4 at 200°C can remove the adventitious surface contamination and, most importantly, reduce the Cu_2O to metallic Cu.
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机译：需要清洁铜表面，以在互连制造过程中除去不希望的表面氧化。在这项工作中，我们使用无水N 2 H 4检查了Cu表面的气相清洁。气体聚类离子束（GCIB）深度分析和使用XPS的元素分析表明，在暴露于空气后形成的Cu样品中的Cu_xo可以有效地将Cu〜0降低到200℃。通过使用原位反射吸收红外光谱（距离）监测表面化学，我们发现原子层沉积（ALD）-like在200℃下的N_2H_4的单一暴露可以去除不偶然的表面污染，最重要的是减少CU_2O金属铜。
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