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首页> 外文期刊>Applied Surface Science >Surface chemical state analysis of electroplated Cu film under Cu-CMP process by means of TOF―SIMS
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Surface chemical state analysis of electroplated Cu film under Cu-CMP process by means of TOF―SIMS

机译:TOF-SIMS法分析Cu-CMP工艺下电镀铜膜的表面化学状态

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摘要

The chemical states of Cu surfaces reacted with quinaldic acid (C_(10)H_7NO_2) were investigated by using time-of-flight-secondary ion mass spectrometry (TOF―SIMS), paying a special attention to the reaction speed, pH of the acidic solution and the composition of the formed complex, in order to understand the mechanisms of Cu-chemical mechanical polishing (Cu-CMP) process. It was found from the evaluation of the secondary ion intensities from Cu, quinaldic acid molecules and Cu-quinaldic acid complexes that: (1) characteristic secondary ion peaks originating from the complex formed by the reaction between Cu and quinaldic acid were observed; (2) the intensities of these secondary ion peaks changed with the soaking time; (3) the reaction rate was dependent on the pH of the solution. It was also found that (4) the composition and the chemical states of the formed complex from the saturated surfaces were almost the same for each pH condition.
机译:用飞行时间二次离子质谱法(TOF-SIMS)研究了与喹啉酸(C_(10)H_7NO_2)反应的Cu表面的化学态,特别注意了酸性的反应速度,pH溶液和所形成的复合物的组成,以了解铜化学机械抛光(Cu-CMP)工艺的机理。通过对Cu,喹啉酸分子和Cu-喹啉酸配合物的次级离子强度的评估发现:(1)观察到特征性的次级离子峰,该峰源于Cu和喹啉酸之间的反应形成的配合物。 (2)这些二次离子峰的强度随浸泡时间而变化; (3)反应速率取决于溶液的pH。还发现(4)对于每个pH条件,从饱和表面形成的络合物的组成和化学状态几乎相同。

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