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DETECTION OF SURFACE DEFECTS BY OPTICAL INLINE METROLOGY DURING Cu-CMP PROCESS
DETECTION OF SURFACE DEFECTS BY OPTICAL INLINE METROLOGY DURING Cu-CMP PROCESS
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机译:Cu-CMP工艺过程中通过光学在线计量学检测表面缺陷
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摘要
An efficient method of detecting defects in metal patterns on the surface of wafers. Embodiments include forming a metal pattern on each of a plurality of wafers, polishing each wafer, and analyzing the surface of the metal pattern on each polished wafer for the presence of defects in the metal pattern by analyzing an optical across-wafer endpoint signal, generated at the endpoint of polishing. Embodiments include determining the location of defects in the metal pattern by determining the position of non-uniformities in the optical-across-wafer endpoint signal.
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