PR and BARC Wet Strip in BEOL Patterning Using a UV-Enabled Aqueous Process

摘要

Conventional plasma strip processes are prone to cause damage to advanced porous low-k materials. Therefore, all-wet processes are gaining a renewed interest for the removal of post-etch photoresist (PR) and Bottom Anti Reflective Coating (BARC) in Back-End-of-Line (BEOL) semiconductor manufacturing. A two step process with a UV pre-treatment and an ozonated strip process is considered. The UV pre-treatment under O_2 at high temperature enhances PR and BARC removal. With a subsequent fully aqueous ozone wet strip, complete removal is feasible.