Nonlinear optical properties related to intersubband transitions in asymmetrical double δ-doped GaAs; effects of an applied electric field

摘要

In this work, we calculated the ground and first excited states of an electron confined in an asymmetric double DDQW system within a Gallium Arsenide (GaAs) matrix. The two-dimensional impurities density (N_(2d)) considered in our calculation are within the range of 10~(12) to 10~(13) cm~(-2). We obtain the linear and nonlinear optical properties related to intersubband transitions as a function of the spacing between 8-doped wells, two-dimensional impurities concentrations as well as in presence of electric field. We reported results for the linear and nonlinear optical absorption coefficient and in the relative refractive index changes. Our results show that the asymmetry induced in the double δ-doped well system gives rise to values that are several orders of magnitude higher in the resonant peaks intensity.