Strong Resonant Intersubband Magnetopolaron Effect in Heavily Modulation-Doped GaAs/AlGaAs Single Quantum Wells at High Magnetic Fields

摘要

Electron cyclotron resonance (CR) has been studied in magnetic fields up to 32 T in two heavily modulation -d-doped GaAs/Al(sub 0.3)Ga(sub 0.7)As single-quantum-well. Little effect on electron CR is observed in either sample in the region of resonance with the GaAs LO phonons. However, above w(sub LO) at B > 27 T, electron CR exhibits a strong avoided-level-crossing splitting for both samples at energies close to E(sub LO) + (E(sub 2)-E(sub 1)), where E(sub 2), and E(sub 1) are the energies of the bottoms of the second and the first subbands, respectively. The energy separation between the two branches is large, reaching a minimum of about 40 cm(sup (minus)1) around 30.5 T for both samples. This splitting is due to a three-level resonance between the second LL of the first electron subband and the lowest LL of the second subband plus a LO phonon. The large splitting in the presence of high electron densities is due to the absence of occupation (Pauli-principle) effects in the final states and weak screening for this three level process.