首页> 外文会议>International Solid-State Sensors, Actuators and Microsystems Conference >EFFECTS OF ENVIRONMENTAL CONDITION ON THE STRENGTH OF SUBMICRON-THICK SINGLE CRYSTAL SILICON FILM
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EFFECTS OF ENVIRONMENTAL CONDITION ON THE STRENGTH OF SUBMICRON-THICK SINGLE CRYSTAL SILICON FILM

机译:环境条件对亚微米厚单晶硅膜强度的影响

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We developed a quasi-static tensile test system that controls environmental conditions, such as pressure, temperature, and surrounding gasses. Using this system, we evaluated the fracture properties of micron- and submicron-thick single-crystal-silicon film under several conditions. The strength of silicon measured in vacuum or helium was slightly higher than that in laboratory air. We measured the fracture toughness at different temperatures ranging from room temperature (RT) to 500°C and found a brittle-to-ductile transition at 70°C for micron-sized silicon film. The fracture toughness drastically increased at the transition temperature and saturated at a level of 2.5MPa m{sup}(1/2), which is twice the value at RT. On the other hand, submicron-thick silicon was less brittle: its fracture toughness was already 2.7MPam{sup}(1/2) at RT.
机译:我们开发了一种用于控制环境条件的准静态拉伸试验系统,如压力,温度和周围的气体。使用该系统,我们在几种条件下评估了微米和亚微米厚的单晶硅膜的断裂性能。在真空或氦气中测量的硅的强度略高于实验室空气中的强度。我们在室温(RT)至500℃的不同温度下测量了裂缝韧性,并发现在70℃下为微米尺寸的硅膜在70℃下发现脆性转变。断裂韧性在过渡温度下大大增加,并在2.5MPa m {sup}(1/2)的水平下饱和,其在室温下的两倍。另一方面,亚微米厚的硅易碎:其断裂韧性已经在室温下已经2.7MPAM {sup}(1/2)。

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