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ENHANCED PERFORMANCE OF A CMOS INTERDIGITAL CAPACITIVE HUMIDITY SENSOR BY GRAPHENE OXIDE

机译:通过石墨烯氧化物增强CMOS叉指电容湿度传感器的性能

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This paper presents a CMOS interdigital capacitive humidity sensor based on graphene oxide, and the sensitivity of this humidity sensor was improved significantly by using graphene oxide as sensing material. The passivation between the Al electrodes and the sensing material was used to ensure the reliability of the capacitive-type humidity sensor. The experimental results show that, compared with the sensor using polyimide as sensing material, the sensitivity of the sensor based on graphene oxide is 23 times larger, and the response time of such a sensor is also improved greatly.
机译:本文介绍了基于石墨烯氧化物的CMOS渐特式电容湿度传感器,并且通过使用石墨烯作为感测材料,显着提高了该湿度传感器的灵敏度。 Al电极和传感材料之间的钝化用于确保电容式湿度传感器的可靠性。实验结果表明,与使用聚酰亚胺作为感测材料的传感器相比,基于石墨烯氧化物的传感器的灵敏度是较大的23倍,并且这种传感器的响应时间也大大提高。

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