THE EFFECTS ON SURFACES OF SILICON AND SILICON DIOXIDE EXPOSED TO 1,1,1,5,5,5-HEXAFLUORO-2,4-PENTANEDIONE

摘要

This study explores the effects of chemical vapor cleaning (CVC) with 1,1,1,5,5,5-Hexafluoro-2,4-Pentanedione (hfac) on surfaces of Si and SiO{sub}2. These surfaces are not significantly roughened due to short exposures to hfac. Trace amounts of fluorine were found on the exposed surfaces after exposure to the unpurified hfac. These fluorinated species may not be from the hfac ligand but may be from impurities within the reagent used in these experiments. The major volatile contaminant observed in the hfac is ethyl trifluoroacetate. These results underscore the need for high purity reagents when performing any type of clean.