Effects of Total Dose 60 Co on Optoelectronic Devices

摘要

Devices based on III-V semiconductors are probable to be critical components of future electronic systems as the demand for greater robustness and susceptibility to well function in rigorous radiation environments continue to increase. Expanding electronic systems into such environments requires a full understanding of the effects that ionizing radiation will have on the optoelectronic properties. In this research, commercial optoelectronic devices consisted of an infrared light emitting diode and a phototransistor with no special handling or third party-packaging were irradiated to 60Co gamma (y) rays up to a total dose of 60 krad. 60Co causes ionization by possesses enough energy to break the atomic bonds which in turn create electrons and holes pairs in the devices. This phenomenon leads to ionizing damage as a result of trapping of excess charges on or near the surfaces of their insulating layers and interfaces. At the end of this testing, the optoelectronic devices under test (DUT) were found to undergo performance degradation due to the accumulated total dose effects. These damaging effects were depending on their current drives and also the Total Ionizing Dose (TID) absorbed.