Physics with Electronics Program, School of Science and Technology Universiti Malaysia Sabah, Locked Bag No. 2073, 88999 Kota Kinabalu, Sabah, Malaysia;
Physics with Electronics Program, School of Science and Technology Universiti Malaysia Sabah, Locked Bag No. 2073, 88999 Kota Kinabalu, Sabah, Malaysia;
Physics with Electronics Program, School of Science and Technology Universiti Malaysia Sabah, Locked Bag No. 2073, 88999 Kota Kinabalu, Sabah, Malaysia;
Material Technology Group (MTEC), Industry Technology Division Malaysian Nuclear Agency, Bangi, 43000 Kajang, Selangor, Malaysia;
electrons; holes; optoelectronic; total ionizing dose (TID);
机译:〜(60)Coγ射线辐照对纳米结构α-MoO_3性质的影响的研究,用于光电和光子器件
机译:MOS和低剂量率敏感的线性双极型器件中的总电离剂量效应
机译:破译光电器件中的金属-C_(60)接口:气相沉积铝降低C_(60)的证据
机译:总剂量60 CO对光电器件的影响
机译:SiGe PMOS器件上的总电离剂量辐射效应和负偏置温度不稳定性
机译:消除有机光电刺激设备中的光法拉第效应和光电容效应。
机译:研究C60F36作为有机光电子器件中的低挥发性p-掺杂剂
机译:使用Co-60伽马射线照射固态科学CD4011,CD4013和CD4060器件的全面综合剂量测试