A new inversion charge centroid model for surrounding gate transistors with HfO2 as gate insulator

摘要

A model for the inversion charge centroid of surrounding gate transistors (SGTs) has been obtained in order to consider HfO2 as gate insulator instead of SiO2. The results obtained with the model have been compared to the simulation data provided by a self-consistent solution of the 2D Poisson and Schrodinger equations. Our model reproduces correctly the inversion charge centroid data of several SGTs with different values of the silicon radii (4, 6.25 and 8 nm) and values of the HfO2 effective mass in the range of m*/m0 [0.1-0.7]. The inversion charge including quantum effects has also been calculated for SGTs with HfO2 as gate insulator.