Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks

摘要

This letter investigates extra traps measured by charge pumping technique in the high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO₂/metal gate stacks. N-V_high level characteristic curves with different duty ratios show that the hole discharge time (t_{base  level}) dominates the value of extra traps. By fitting ln (N (t_{base  level} = 1μ face='roman'>s) - N (t_{base  level})) - Δt_{base  level} at different temperatures and computing the equation t = τ₀ exp (α_h,SiO2d_SiO2 + α_h,HfO2d_HfO2,trap), the results show that these extra traps measured by the charge pumping technique at high voltage zone can be attributed to high-k bulk shallow traps.