Monte Carlo Simulation of Sb-based Heterostructures

摘要

Narrow band gap semiconductors have become a great option to increase mobility and operation frequency in high electron mobility transistors (HEMTs). In this work, two different narrow band gap semicoductors, InAs and InSb, and their associated heterostructures, AlSb/InAs and AlInSb/InSb, have been studied by means of Monte Carlo simulations.