Thin high-k dielectric layers deposited by ALD

摘要

In this paper first results on the growth of thin layers of Al2O3, HfO2 and nanolaminates of them, by Atomic Layer Deposition are reported. The electrical characterization of the deposited layers has been carried out by means of the analysis of the capacitance-voltage and current-voltage characteristics of Aluminum-high-k dielectric-Silicon capacitors. The obtained results show that for the same physical thickness, HfO2 layers are leakier than Al2O3 layers and that a nanolaminate stack of them improves the performance of the dielectric in terms of current and breakdown voltage although at the expense of a higher EOT.