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The Study of Optical Spectrums (of Absorption and Reflexion) in Semi-Magnetic Semiconductors of Cd_(1-x)Mn_xTe Type

机译:CD_(1-X)MN_XTE型半磁半导体中光谱(吸收和反射)的研究

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Solid solutions from the Cd_(1-x)Mn_xTe category are semiconducting materials with a very good perspective of being used in optoelectronics and nanoelectronics. Characteristic for the absorption spectrums of the semi magnetic solid substances Cd_(1-x)Mn_xTe is the presence, at low temperatures, of a well marked frontier, that moves towards higher energies with the increase of the x component. In the long wavelength domain of the spectrum there is a series of maximum values, associated with the absorption through the formation of free excitons. An observation has been made that in solid solutions Cd_(1-x)Mn_xTe (0,0≤x≤0,5) the photon–exciton interaction is very strong at temperatures around T=78 K. The acceptor level, determined by this band, is displaced to the extremity of the valence band with ~30 meV at T=293 K and –40 meV at 78 K. From analyzing the structure of the reflection spectrum we determined the forming mechanism of the edge of the intrinsic adsorption band with the energies of the maximum exciton values. For the thin layers adsorption spectrums, grown on a mica base at a temperature of 680 K through discrete evaporation of the Cd_(0,5)Mn_(0,5)Te crystals, the edge of the adsorption band is located at the energy level ~1,99 eV and 2,13 eV for the temperatures 293 K and 78 K respectively. In the adsorption spectrum of the thin layers there is an adsorption threshold at~1,7eV (T=293 K) and 1,84 eV (T=78 K). The given level of impurity, formed of electrons that make transitions from the impurity level in the conductivity level, is situated at ~0,3 eV from the maximum of the valence band.
机译:来自CD_(1-X)MN_XTE类别的固溶体是半导体材料,具有非常好的视角,它在光电子和纳米电子中使用。半磁性固体物质的吸收光谱的特性Cd_(1-x)Mn_xte是在良好标记的边界的低温下的存在,其随着X分量的增加而移动朝向更高的能量。在光谱的长波长域中,存在一系列最大值,与通过形成自由激子的吸收相关。已经进行了观察结果,在固溶体CD_(1-X)MN_XTE(0,0≤x≤0,5)中,光子 - 激子相互作用在T = 78K周围的温度下非常强烈。受激菌水平,由此确定频段,在78K时,在T = 293k和-40mev处用〜30mev的价带的末端移位。从分析反射光谱的结构,我们确定了内在吸附带的边缘的成形机制最大激励值的能量。对于薄层吸附光谱,通过CD_(0.5)MN_(0.5)TE晶体的离散蒸发在680k的温度下生长在680k的温度下,吸附带的边缘位于能量水平〜1,99eV分别为温度293 k和78 k的2,13 eV。在薄层的吸附光谱中,在〜1,7ev(t = 293k)和1,84eV(t = 78k)下存在吸附阈值。由电子在电导率水平中的杂质水平转变的电子形成的给定水平,位于〜0.3eV,从价带的最大值。

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