ELECTIC FIELD ABSORPTION TYPE OPTICAL MODULATOR, SEMICONDUCTOR INTEGRATED ELEMENT WITH ELECTIC FIELD ABSORPTION TYPE OPTICAL MODULATOR, MODULE USING THEM, AND METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED ELEMENT WITH ELECTIC FIELD ABSORPTION TYPE OPTICAL MODULATOR

摘要

PROBLEM TO BE SOLVED: To suppress holes and holing up of electrons and to provide a light source for transmission signal which has excellent chirping characteristics.;SOLUTION: An n-side GRIN-SCH (Grated Index-Separate Confinement Heterostructure) layer 4 is constructed with three layers, that is, a 1.0Q layer 4a with 20 nm thickness, a 1.1Q layer 4b with 20 nm thickness and a 1.2Q layer 4c with 20 nm thickness from the n-type InP substrate side. An MQW (Multiple Quantum Well) absorption layer 5 is constructed with eight layers of well layers 5A respectively with 10 nm thickness and barrier layers 5B respectively with 5 nm thickness. The first to fourth layers from the n-type InP substrate side of the barrier layers 5B are respectively constructed with 1.2Q layers with 5 nm thickness and the fifth to seventh layers are respectively constructed with InGaAlAs with 5 nm thickness corresponding to 1.15 μm bands. A p-side GRIN-SH layer 6 is constructed so as to make the composition continuously vary from a 1.15 μm band to InGaAlAs corresponding to a 1.0 μm band starting from the MQW absorption layer 5 to a p-type InP upper cladding layer 7.;COPYRIGHT: (C)2005,JPO&NCIPI