E-beam exposure system using multi column cell (MCC)with CP for mask writing

摘要

In the Mask D21 project at ASET, the authors designed a novel electron beam exposure system using the concepts ofMCC (multi column cell), CP (character projection), and VSB (variable shaped beam) to improve the throughput ofelectron beam exposure systems. They presented outlines of a proof-of-concept system of MCC, and have shown theperformances of VSB and CP in the system. They evaluated the impacts on beam position in one column cell caused bydeflections in another column cell. The impacts were found to be less than 0.1nm in presence of major deflections in theneighboring column cell. Hence it was concluded that there was no noticeable impact on deflections cause by theneighboring column cells in the MCC system.