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E-beam exposure system using multi column cell (MCC) with CP for mask writing

机译:使用带有CP的多列单元(MCC)进行掩模写入的电子束曝光系统

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In the Mask D2I project at ASET, the authors designed a novel electron beam exposure system using the concepts of MCC (multi column cell), CP (character projection), and VSB (variable shaped beam) to improve the throughput of electron beam exposure systems. They presented outlines of a proof-of-concept system of MCC, and have shown the performances of VSB and CP in the system. They evaluated the impacts on beam position in one column cell caused by deflections in another column cell. The impacts were found to be less than 0.1nm in presence of major deflections in the neighboring column cell. Hence it was concluded that there was no noticeable impact on deflections cause by the neighboring column cells in the MCC system.
机译:在ASET的Mask D2I项目中,作者使用MCC(多列单元),CP(字符投影)和VSB(可变形状束)的概念设计了一种新颖的电子束曝光系统,以提高电子束曝光系统的通量。 。他们提出了MCC概念验证系统的概述,并展示了该系统中VSB和CP的性能。他们评估了另一列单元格中的挠度对一个列单元格中的梁位置造成的影响。发现在相邻列单元中存在大挠度的情况下,影响小于0.1nm。因此得出的结论是,对MCC系统中相邻列单元所引起的挠度没有明显影响。

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