Study of Second-generation Proximity Gap Suction Development System(PGSD-I I) for mask fabrication

机译：用于掩盖制造的第二代接近间隙吸入系统（PGSD-I I）的研究

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Development process for 3x nm node devices and beyond is becoming a great issue in maskfabrication. The following items, such as uniformity, repeatability, loading effect and defect must beimproved. To evolve the development process, TEL, DNP Omron and Toshiba have been jointlydeveloped next generation equipment which is called "Second-generation PGSD (Gen.2)". In this paper, PGSD Gen.2 concept is introduced and its performance is reported.

机译：3x NM节点设备及更超越的开发过程正在成为MaskFabrication中的一个很大的问题。以下项目，例如均匀性，可重复性，装载效果和缺陷必须避免。为了演变开发过程，TEL，DNP欧姆龙和东芝已被联合开发的下一代设备，称为“第二代PGSD（Gen.2）”。本文介绍了PGSD Gen.2概念及其性能。

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《International symposium on photomask technology》|2008年||共12页
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作者
Hideaki Sakurai; Masatoshi Terayama; Mari Sakai; Masamitsu Itoh; Osamu Ikenaga; Hideo Funakoshi; Norifumi Sato; Kenji Nakamizo; Masato Nomura; Yoshihiko Saito; Junji Nakao; Naoya Hayashi;
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正文语种
中图分类光刻、掩膜;
关键词
proximity; gap; suction; development; dissolution monitor; dissolution product; loading effect; uniformity; nozzle; multi-step development; half-development; PGSD; IIH;

机译：接近;差距;吸力;发展;溶出监测;溶解产品;加载效果;均匀;喷嘴;半发展;第三;第三;

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专利

1. Mask process proximity correction for next-generation mask fabrication [J] . Soon Ho Kim, Sung-Woon Choi, Jung-Min Sohn, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure . 2003,第6期

机译：用于下一代掩模制造的掩模工艺邻近校正
2. High contrast 3D proximity correction for electron-beam lithography: An enabling technique for the fabrication of suspended masks for complete device fabrication within an UHV environment [J] . Rosamond Mark C., Batley Joseph T., Burnell Gavin, Microelectronic Engineering . 2015,第auga1期

机译：用于电子束光刻的高对比度3D接近校正：一种用于制造悬浮掩模的使能技术，用于在超高压环境中完成器件制造
3. Fabrication of a micro-tip array mold using a micro-lens mask with proximity printing [J] . Lin Tsung-Hung, Chao Ching-Kong, Yang Hsiharng Microsystem technologies . 2016,第2期

机译：使用带有近距印刷的微透镜掩模制造微尖端阵列模具
4. Study of Second-generation Proximity Gap Suction Development System(PGSD-I I) for mask fabrication [C] . Hideaki Sakurai, Masatoshi Terayama, Mari Sakai, International symposium on photomask technology . 2008

机译：用于掩盖制造的第二代接近间隙吸入系统（PGSD-I I）的研究
5. Development of "core-suction" technique for fabrication of highly doped fibers for optical amplification and characterization of optical fibers for Raman amplification. [D] . Goel, Nitin Kumar. 2005

机译：开发“芯吸”技术以制造用于光放大的高掺杂光纤以及表征用于拉曼放大的光纤。
6. Fabrication of Micropatterned Hydrogels for Neural Culture Systems using Dynamic Mask Projection Photolithography [O] . J. Lowry Curley, Scott R. Jennings, Michael J. Moore 2011

机译：动态掩模投影光刻技术制备用于神经培养系统的微图案水凝胶
7. High contrast 3D proximity correction for electron-beam lithography: An enabling technique for the fabrication of suspended masks for complete device fabrication within an UHV environment [O] . Rosamond MC, Batley J, Burnell G, 2015

机译：用于电子束光刻的高对比度3D接近校正：用于制造悬挂掩模的使能技术，用于在UHV环境中完成器件制造
8. Ionenstrahllithographie: Entwicklung Eines 1:1 Proximity Projektionsverfahrens Auf der Basis von Channeling-Masken (Ion Beam Lithography: Development of a 1:1 Proximity Projection Method Based on Channeling Masks) [R] . Csepregi, L. 1986

机译：Ionenstrahllithographie：Entwicklung Eines 1：1 proximity projektionsverfahrens auf der Basis von Channeling-masken（离子束光刻：开发基于通道掩模的1：1接近投影方法）

Study of Second-generation Proximity Gap Suction Development System(PGSD-I I) for mask fabrication

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