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The study of CD behavior due to transmission control position change within photomask substrate

机译:光掩模衬底内传输控制位置变化引起的CD行为研究

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As design rule of memory device is smaller and smaller, the CD uniformity of a photomask become the mostimportant factor to satisfy wafer exposure performance. Once the photomask is made, CD uniformity of the maskcan't be changed and if CD uniformity of the mask is not good to use for wafer exposure, we must reject it andmake another one again. But, after applying transmission control tool for CD uniformity, we have an extra chance to control mask CD uniformity in one mask and this is very effective for wafer printing result. In this paper, we are going to evaluate the behavior of wafer CD due to transmission control position change within photomask substrate and find the optimum control position for better wafer result.
机译:作为存储器装置的设计规则较小,光掩模的CD均匀性成为满足晶片曝光性能的最重要因素。一旦光掩模就制造了光掩模,掩盖的CD均匀性就不会改变,如果掩模的CD均匀性不适合用于晶圆曝光,我们必须拒绝另一个并换一个。但是,在应用CD均匀性的传输控制工具后,我们在一个掩模中控制掩模CD均匀性的额外机会,这对于晶片打印结果非常有效。在本文中,我们将根据光掩模基板内的传输控制位置改变,评估晶片Cd的行为,并找到更好的晶片结果的最佳控制位置。

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